Surfaces, Interfaces, and Applications
- Guoping Su
Guoping Su
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
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- Haoyan Chen
Haoyan Chen
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
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- Honglong Ning*
Honglong Ning
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
*Emai: [emailprotected]. Phone: +86-20-8711-3542.
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- Xiao Fu
Xiao Fu
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
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- Muyun Li
Muyun Li
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
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- Yuexin Yang
Yuexin Yang
See AlsoContiguous Mo Species and SMSI Effect in MoOx Reinforce Catalytic Performance in Reverse Water–Gas Shift ReactionManganese Silicate with Proximity Effect and Enhanced Polarity toward Substrates for Efficient Enzymatic BiosensingDual Antibacterial and Soft-Tissue-Integrative Effect of Combined Strontium Acetate and Silver Nitrate on Peri-Implant Environment: Insights from Multispecies Biofilms and a 3D Coculture Model2D Reconfigurable Memory for Integrated Optical Sensing and Multifunctional Image ProcessingGuangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
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- Zhihao Liang
Zhihao Liang
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
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- Rihui Yao*
Rihui Yao
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
*Emai: [emailprotected]
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- Junbiao Peng
Junbiao Peng
Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, State Key Laboratory of Luminescent Materials and Devices, School of Materials Sciences and Engineering, South China University of Technology, Guangzhou 510640, China
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
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https://pubs.acs.org/doi/10.1021/acsami.4c22420
Published April 15, 2025
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Abstract
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Atomic layer deposition (ALD) is advantageous in the flexible and precise control of the composition and thickness of thin films. However, the nucleation delay during the deposition of multicomponent films leads to unexpected thickness and composition, the mechanism of which is still ambiguous. Herein, we reveal that the surface formed by a certain precursor is self-limiting for itself; there remain interstitial sites for other precursors. This phenomenon results from differences in the steric hindrance and molecular volume between different precursors. To address this issue, we develop a complementary supercycle process consisting of several three-step ALD subcycles that eliminates nucleation delays by preoccupying interstitial sites through a novel three-step subcycle design. Unlike conventional supercycle processes, our approach intentionally aligns the second precursor of one subcycle with the first precursor of the next, thereby preoccupying interstitial sites and suppressing the nucleation delay. Applied to Indium–Tin–Zinc-Oxide (ITZO) thin films, this method produces denser films with fewer defects compared to the conventional supercycle process. The resulting enhancement-type ITZO thin-film transistors (TFTs) achieve superior electrical properties (mobility(μ): 27.31 cm2 V–1 s–1, drift of threshold voltage (ΔVth): +0.8 V/–0.4 V (@ ± 1 MV cm–1, 3600 s)). Beyond ITZO, this work establishes a universal framework for defect-suppressed growth of single-/multicomponent oxides via ALD, directly addressing a critical bottleneck in high-performance electronics manufacturing.
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© 2025 American Chemical Society
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- Atomic layer deposition
- Gel permeation chromatography
- Precursors
- Thin films
- Transistors
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
Click to copy citationCitation copied!
Published April 15, 2025
Publication History
Received
Accepted
Revised
Published
online
© 2025 American Chemical Society
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